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n т o„» т A "The Measurement of Power at a Wavelength of 3 cm by Thermistors and Bolometers" Proc. Inst. Elect., 102B, 819, November (1955).

13 AIan E E., "A Single Bead Broadband Coaxial Thermistor Mount", IRE Trans. Instr.,

14 MomgomeryTG!" ° Microwave Measurements", MIT Radiation Lab.

15 fiflinsboroghG F,, "Techniques of Microwave Measurements", MIT Radiation Lab. ries McGraw-Hill (1974).

1л Rieck H and Panniger, F., "Ein Neuer Thermistor-Leistungsmesskopf fiir Я = 9-20сш"5 Nachricht 7, 101 March (1957).

17 Passell T О "Plasma Calorimetry in the Table Top Mirror Machine", Bull. Amer. Phys Soc., 6, i95 (1961).

18 Chambers, E. S., "Power Calorimetry of Fast-Particle Beams", Rev. Sci. Instr., 35, 95, Januaiy (1964).

19 Trustin, A., "The Possibility of Using the Thermal Time Constant of a Temperature Sensitive Resistor to Obtain Phase Advance of an Electrical Signal", C. S. Memo 68 Metropolitan-Vickers, Sheffield (1943).

26. Becker, J. A., Green, C. B. and Pearson, G. L., "Properties and Uses of Thermistors:

Thermally Sensitive Resistors", Bell Syst. Tech. J., 26, 170 (1947). 21 Cooper W. H. and Seymour, R. A., "Temperature-Dependant Resistors: Uses as Circuit

Elements". Wireless Engng., 24, 298 (1947).

22. Bollmand, J. H. and Kreer, J. G., "The Application of Thermistors to Control Networks", Proc. Insi. Radio Eng., 38, 20 (1950).

23. Smith, O. J. M., "Thermistors", Rev. Sci. Instr., 21, 344 (1950).

24. Burgess, R. E., "The AC Admittance of Temperature-Dependant Circuit Elements", Proc, Phys. Soc. В., 68, 766 (1955).

25. Burgess, R. E., "Electrical Oscillations in Thermistors and Germanium Point-Contact Rectifiers", J. tlectronics. 1, 297 (1955),

26. Candy, C. J. N., "The Specification of the Properties of the Thermistor as a Circuit Element in Very-Low-Frequency Systems". Proc. lEE. I03B, 398, May (1956).

27. Bjork, N. and Davidson, R,, "Small Signal Behaviour of Directly Heated Thermistors", Chalmers Тек. Hogsk. Handl. Avd. Electroteknik. 48, No. 169 (1955).

28. Hyde, F, J., "Impedance of a Thermistor al Low Frequencies", J. Electronics, I, 303 (1955).

29. Krau.s, K., "Thermistors as Circuit Elements in Low-Frequency Circuits", Rev. Sri. Instr., 39. 216, February (1968).

К главе 7

1. Bjork, N., "Theory of the Indirectly-Heated Thermistor". Chalmers Тек. Hogsk. Handl, No. 21 1 (1959),

2. Bjork, N. and Davidson, R., "Small Signal Behaviour of Directly Heated Thermistors", Chalmers Тек. Hogsk. Handl. No. 169 (1955).

4 wvfi°V,?" "Thermistor Technics", Electronic Industries. 4, 74 (1945).

Widdis, F, C, "The Indirectly-Heated Thermistor as a Precise AC/DC Transfer Device",

Ргм-./££.,о;(в, 693 (1956). 5. Schrader, H. J., "AC Compensation Measurement With Indirectly Heated Thermistors", "ofec/i Z. 73A, 547 (1952).

Wood, H. В., -An RMS Milliameter of Novel Design for the Measurement of Current 7 nc.Tr m" i" "•"V.v". J. Sci. Inst., 31, 124 (1954).

637 October ("967* "T"™*" Powermeter", Electronic Engineering, p. П95оГ" An Aid to RMS Instrumentation", Electronics, p. 93, July

TW,mv!; ? -w""- °- "A New DC/AC Digital Power and Energy Meter", lEEB 10 Savove Г "Г- у/"- -9 57, February (1950),

г7ы1л т ".Plleur de Eigne a Trois Transistors Pour Systemes a 12 MHz", Cables & Transmission, 29, No. 2, 177, April (1975).

К главе 8

1. ТЫел-СЫ, NGuyen and Suchet, J„ "Etude des Semiconducteurs aux Temperatures Elevees rhermistanceii Refractaires , Ann. de radioelectricite, 6, 99, April (1951).



2. Brit. Pat., 815, 357, "Silicon Carbide Resistance Bodies and Methods of Making Same", to Carborundum Company, June 24th (1959).

3. Brit. Pat., 1.138,719, "Ceramic Resistance Bodies", to Phihps Electronic and Associated Industries Ltd., January 1st (1969).

4. Delaney, R. A.. "Micrommiature Electronic Thermal Sensing Devices",

5. Nernst, W.. "Ober die eiektrolytische Leitung Fester Korper Bei Sehr Hohen Temperaturen". Z. Elektrochein., 6, 4L (19СЮ).

6. Wagner. C, "Ober den Mechamsmns der Elektnschen Stromleiung im Nernststift". AururwLSS. 31, 265 (1943).

7. Brit. Pat.. 874,822. "Thermistors", to Standard Telephones & Cables Ltd.. August 10th (1961).

8. Macklen, E. D. and Jones. C. S., "New NTC Thermistor for High Temperature Applications", Internal. Control and Instrumentation Conf., London (1971).

9. Brit. Pat., 1,303,784, "Improvements Relating to Electrical Devices", to Standard Telephones & Cables Ltd., January 17th (1973).

10. Brit. Pat.. 1.214.282. "A Material for the Manufacture of High Temperature Thermistors", to Plaschinsky and Sheftel, December 2nd (1970).

11. Macklen, E. D.. "NTC Thermistors for Operation Above 300 C". Tempcon "73 Conference, London, March (1973).

12. Hyde, G. R., Maust, E. E. and Furlong, L. R., "Yttria and Dysprosia as High Temperature Thermistor Materials", US Bur. Mines Rep. Invest., No. 7458 (1970).

13. McMurtry, C. H., Terrell, W. T. and Benecki, W. Т., "A Tin Oxide Thermistor for Temperature Sensing to 1800 F", IEEE Trans.. IGA-2, 461, November/December (19661.

14. Prudenziati and Majni. G., "Boron Thermistor for High Temperature Measurements". IEEE Trans.. IEC-20, 30, February (1973).

15. Goodenough. J. В., "Direct Cation Cation Interactions in Several,Oxides", Pins. Rer.. 117, 1442 (1960).

16. Foex, M. and Loriers, J., "Changes in Expansion and Electrical Conductivity of Titanium Sesquioxide Near 200 ", Coinpt. Reiidus. 226, 901 (1948).

17. Morin, F. J., "Oxides Which Show Metal-to-lnsulator Transition at the Neel Temperature". Pliys. Rer. In., 3, 34 (1959).

18. Foex, M., Jaffray, J., Goldstamb, S., Lyanol, R., Wey, R. Wucker, J., "The Changes in Some Properties of Vanadium Sesquioxide Near Its Transformation Points", J. Recherches C.N.R.S. Luhs. Bellevue, 21, 237 (1952).

19. Futaki, H., "A New Type Semiconductor (Critical Temperature Resistor)", Jap. J. Appl. Phys., 4, 28, January (1965).

20. van Sleensel, K., van de Burg, F. and Kooy, C, "Thin-Film Switching Elements of VO,", P/i >s- Res. Repts., 22, 170 (1967).

21. MacChesney, J. B. and Guggenheim, H. J., "Growth and Electrical Properties of Vanadium Dioxide Single Crystals Containing Selected Impurity Ions", J. Chem. Phys. Solids, 30, 225 (1969).

22. Futaki, H. and Aoki. M., "Effects of Various Doping Elements on the Transition Temperature of Vanadium Oxide Semiconductors", Jap. J. Appl. Phys., 8, 1008, August (1969).

.23. Eastwood. H. K., Simon. T. R. and Khoi, N. N.. "Temperature Sensitive Resistive Devices", Brit. Pat., 1,482,317. July 7th (19751.

К главе 10

1. Sauer. H. A. and Flaschen. S. S.. "Positive Temperature Coefficient of Resistance Thermistor Materials for Electrical Applications". Proc. 7th Electronics Symp.. Washington 41. (1956).

2. Haarjman, P. W., Dam, R. W. and Klasens. H. A.. "Method of Preparation of Semiconducting Material", Netherlands Pat. No., 84, 015, February 15th (1957).

3. Saburi. O., "Properties of Semiconductive Barium Titanates", J. Phvs. Soc. Japan, 14, 1159, September (1959).

4. Sauer, H. A. and Fischer. J. R.. "Processing of Positive Temperature Coefficient Thermistors", J. Amer. Ceram. Soc. 43, 297, September (1960).

5. Tennery, V. J. and Cook, R. L., "Investigation of Rare-Earth Doped Barium Titanate", J. Amer. Ceram. Soc, 44, 187, April (1961).

6. Saburi. O.. "Semiconducting Bodies in the Family of Barium Titanates", J. Amer. Ceratn. Soc. 44, 54, February (1961).

7. Motto, J. W., "Characteristics and Applications of PTC Thermistors", Eleciro-Technology, 96, July (1962).



8 Saburi О and Wakino, К., "Processing Techniques and Apphcations of Positive Temperature Coefficient Thermistors", IEEE Trans. Сотр. Parts, 10, 53 (1963).

9 Brauer H. and Fenner, E., "Kaltleiter-ein Bauelement mit positivem Temperaiurkoefrizienien". Siemens Z.. 5, 369, May (1964).

10 Brown D. J.. Sly. F. A. W. and Anhur, G. "The effect of Oxide Impurities on the Electrical Resistivity of Lanthanum Doped Barium Tilanale", Proc. Brit. Ceram. Soc, No. 10 195, March (1968).

11 Matsuo Y Fuiimura, M., Sasaki, H., Nagase. K. and Hayakawa, S., "Semiconducting BaTiO,"wiih Additions of AlO,, SiO, and TiO". Cer. Bull.. 47, 292, March (1968).

12. Tien, f. Y. and Carlson, W. G., "Inlluence of Oxygen Partial Pressure on Properties of Semiconducting Barium Tiianate", J. Amer. Ceram. Soc, 46, 292, June (1963).

13. MacChesney, J. B. and Potter, J. F., "Factors and Mechanisms Affecting the Positive Temperature Coefficient of Resistivity of Barium Titanate", J. Amer. Ceram. Soc, 48, 81, February (1965).

14. Ashida, T. and Toyoda, H., "Effects of additions and of Ambient Atmosphere During Heating on the Electrical Resistivity of Semiconducting BaTiOj", Jap. J. Appl. Phvs., 5, 269, April (1966).

15. Landis, H. M., "Electrodes for Ceramic Barium Tiianate Type Semiconductors", J. Appl. Phys., 36, 2000, June (1965).

16. Mendelsohn, L. 1., Orth, E. D., Curran, R. E. and Robie, E. D., "Preparation and Properties of Positive Temperature Thin Film Thermistors", Ceram. Bull.. 45, 771, September (1966).

17. Mendelsohn, L. I., Orth, E. D. and Curran, R. E., "Preparation and Properties of Unsupported Positive CoefTicient Thin Thermistor Films", Vacuum Sci. Tech., 6, 363, May/June (1969).

18. Goodman, G., "Electrical Conduction Anomaly in Samarium-Doped Barium Titanate", J. Amer. Ceram. Soc, 46, 48, January (1963).

19. Peria, W. Т., Bratschum, W. R. and Fenity, R. D., "Possible Explanation of Positive Temperature Coefficient in Resistivity of Semiconducting Ferroelectrics", J. Amer. Ceram Soc. 44, 249. May (1961).

20. Hey wang. W., "Resistivity Anomaly in Doped Barium Tiianate", J. Amer. Ceram. Soc, 47,484, October (1964).

21. Heywang, W., "Semiconducting Barium Tilanale", J. Matls., Sci.. 6, 1214 (1971).

22. Goldschmidt, V. M., "Geochemische Verteilungsgeselze der Elemente VH", p. 8, Verlag Jacob Dubward, Oslo (1927).

23. Shirane, G., Jona, F. and Pepinski, R., "Some Aspects of Ferroelectricity", Proc. IRE, 43,

1738 (1955).

24. Rushman, D. F. and Slrivens, M. A., "Permittivity of Polycrystals of the Perovskite Type". Trans. Farad. Sac, 42A, 231 (1946).

25. Den. M., Seignettoelectric Mixed Tilanales", Periodica Pohtechn. Chem. Eng., 4, 307 (1960). *

26. Jonker. G. H., "Some Aspects of Semiconducting Barium Tilanale", Solid State Electronics. 1, 895 (1964).

27. Eberspacher, O., "Substitution of Antimony of Barium Tilanates", Naturwiss, 49, 155

(1962).

К главе И

1. Saburi, О. and Wakino, К., "Processing Techniques and Applications of Positive Temperature Coefncienl Thermistors", IEEE Trans. Сотр. Pans.. 10, 53, June (1963). -. Sauer. H. A. and Fisher, J. R., "Processing of Positive Temperature Coefficient Thermistors", J. Amer Ceram. Soc, 43, 297, June (1960).

ffburi, O., "Properties of Semiconductive Barium Titanales", J. Phy.s. Soc. Japan. 14,

1159, September (1959). 4. Brenner, A. and Riddell, G. E., "Nickel Plating on Steel! Good-Quality Deposits by

Chemical Reaction" J. Res. Nat. Bur. Stand.. 37, 31 (1946). • У Sauer, H. A., "Ohmic Contents to Semiconducting Ceramics". J.

Electrochem. Soc. 107, 250. March (1960) 6. Harman, G. G. "Hard Gallium Alloys for Use as Low Resistance Electrodes and for

Bonding Thermocouples into Samples", Rev. Sci. Instr., 30, 717, July (1960). /. Hanke. L. and Loebl, H.. "Keramische Kaltleiter fur Netzspannungsbetrieb". Siemens

CoDipdiiiiit /ii/ormmioii. 6-68. No. 1 (1968) 8. Tekster-Proskuryakova. G. N. and Sheftel. I. T. "Thermistors with a Positive

Temperature CoefTicienl of Resistance". Rod. Engng. Elect. Pins., p. 781 (1966).



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